WebbUltra-high-dose Si ion implantation (1 × 10 18 cm −2 ) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford backscattering and channeling (RBS-C) and cross-sectional transmission electron … Webb1 dec. 1997 · First-order Raman spectra of wurtzite GaN made from natural Ga and isotopically pure 15N and natural N ~99.63% 14 N! were measured at low temperature. …
In Situ Raman Spectroscopy of Copper and Copper Oxide Surfaces …
Webb1 mars 1995 · @article{osti_457046, title = {Effect of isotopic disorder on Raman scattering spectra of crystals}, author = {Plekhanov, V G}, abstractNote = {The first results of a … Webb19 jan. 2024 · Boron arsenide (c−BAs) is at the forefront of research on ultrahigh thermal conductivity materials. We present a Raman scattering study of isotopically tailored … hi saditty
Disorder‐Activated Scattering and Two‐Mode Behavior in Raman …
WebbWe have measured polarized Raman spectra in a 2.0 mu m GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN … Webb11 nov. 2024 · Heavily Si-doped GaN layers grown by pulsed sputtering deposition (PSD) on Fe-doped GaN/Al 2 O 3 templates are investigated using infrared reflectance and … WebbSPECTROSCOPY AND SPECTRAL ANALYSIS 2024, Vol. 43 Issue (04): 1140-1146 DOI: 10.3964/j.issn.1000-0593 ... TANG Xiang 5, LUO Wu-gan 1, 2* 1. Key Laboratory of Vertebrate Evolution and Human Origins,Institute of Vertebrate Paleontology and Paleoanthropology,Chinese Academy of Sciences, Beijing 100044,China 2. hisafuku kisen k.k